參數(shù)資料
型號: X04xxxF
廠商: 意法半導體
英文描述: Sensitive Gate SCR(敏感門硅控整流器)
中文描述: 靈敏柵極可控硅(敏感門硅控整流器)
文件頁數(shù): 3/4頁
文件大?。?/td> 64K
代理商: X04XXXF
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 :
Maximum average power dissipation ver-
sus average on-state current.
0
20
40
60
80
100
120
140
0
1
2
3
4
5
-85
-95
-105
-115
-125
P (W)
Tcase ( C)
o
Rth(j-c)
Rth(j-a)
Tamb ( C)
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase).
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
0.2
0.4
0.6
0.8
1
I
(A)
T(AV)
= 180
o
Tamb ( C)
Fig.3 :
Average on-state current versus case tem-
perature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Tj( C)
o
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
1
10
100
1000
0
5
10
15
20
25
30
35
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
X04xxxF
3/4
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