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參數(shù)資料
| 型號(hào)： | X02xxxN |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Sensitive Gate SCR(硅控整流管) |
| 中文描述： | 靈敏柵極可控硅（硅控整流管） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 104K |
| 代理商： | X02XXXN |
X02xxxN
May 1998 Ed: 1A
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
*
RMS on-state current
(180
°
conduction angle)
Ttab= 90
°
C
1.4
A
Ta=75
°
C
1.0
A
I
T(AV)
*
Mean on-state current
(180
°
conduction angle)
Ttab= 90
°
C
0.9
A
Ta=75
°
C
0.64
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
°
C )
tp = 8.3 ms
25
A
tp = 10 ms
22.5
A
I
2
t
I
2
t Value for fusing
tp = 10 ms
2.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA di
G
/dt = 0.1 A/
μ
s.
30
A/
μ
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
°
C
Tl
Maximum lead temperature for soldering during 10s
260
°
C
* : With 5cm2 copper (e=35
μ
m) surface under tab.
ABSOLUTE RATINGS
(limiting values)
SOT223
(Plastic)
I
T(RMS)
= 1.4A
V
DRM
= 200V to 800V
Low I
GT
< 200
μ
A
FEATURES
Symbol
Parameter
Voltage
Unit
B
D
M
N
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
°
C R
GK
= 1K
200
400
600
800
V
The X02xxxN series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose high
volume applications using surface mount
technology.
DESCRIPTION
A
A
K
G
1/5
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