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參數(shù)資料
| 型號： | WV3EG265M72EFSU265D4MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 171K |
| 代理商： | WV3EG265M72EFSU265D4MG |
WV3EG265M72EFSU-D4
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
DC ELECTRICAL CHARACTERISTICS
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
Notes
Supply Voltage DRR266/DDR333 (nominal VCC 2.5V)
VCC
2.3
2.7
V
I/O Supply Voltage DRR266/DDR333 (nominal VCC 2.5V
VCCQ
2.3
2.7
V
I/O Reference Voltage
VREF
0.49 × VCC
0.51 × VCC
V1
I/O Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
2
Input Logic High Voltage
VIH(DC)
VREF + 0.15
VCC + 0.30
V
Input Logic Low Voltage
VIL(DC)
-0.3
VREF - 0.15
V
Input voltage level, CK and CK#
VIN(DC)
-0.3
VREF + 0.30
V
Input differential voltage, CK and CK#
VID(DC)
0.3
VREF + 0.60
V
3
Input crossing point voltage, CK and CK#
VIX(DC)
0.3
VREF - 0.60
V
Input leakage current
Addr CAS#,
RAS#, WE#
II
-36
36
A
CS#, CKE
-18
18
A
CK, CK#
-10
10
A
DM
-4
4
A
Output leakage current
IOZ
-10
10
A
Output high current (normal strength) VOUT = v +0.84V
IOH
-16.8
mA
Output high current (normal strength) VOUT = VTT - 0.84V
IOL
16.8
mA
Output high current (half strength) VOUT = VTT - 0.45V
IOH
-9
mA
Output high current (half strength) VOUT = VTT - 0.45V
IOL
9mA
Notes:
1
VREF is expected to equal to 0.5*VCCQ of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-2 percent of the
DC value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CK and the input level of CK#.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VIN, VOUT
Voltage on VCC pin relative to VSS
-0.5 ~ 3.6
V
VCC, VCCQ
Voltage on VCC & VCCQ supply relative to VSS
-1.0 ~ 3.6
V
VREF
Voltage of VREF supply relative to VSS
-1.0 ~ 3.6
V
TSTG
Storage Temperature
-55 ~ +150
°C
TA
Operating temperature
0 ~ 70
°C
PD
Power dissipation
18
W
IOS
Short circuit output current
50
mA
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional ioeration should be restricted to recommended operation conditions.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG265M72EFSU265D4N | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4NG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4S | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4IM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
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