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參數(shù)資料
| 型號(hào)： | WV3EG265M72EFSU265D4MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | WV3EG265M72EFSU265D4MG |
WV3EG265M72EFSU-D4
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
VCC = VCCQ = +2.5V ±0.2V
AC CHARACTERISTICS
335
262
265
UNITS
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Exit self regresh to read command
tXSRD
200
tCK
Refresh interval time
tREFI
7.8
s
Output DQS vaild window
tQH
tHP-tQHS
ns
Clock half period
tHP
tCLmin or
tCHmin
tCLmin or
tCHmin
tCLmin or
tCHmin
ns
Data hold skew factor
tQHS
0.55
0.75
ns
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
ns
Active Read with auto precharge command
tRAP
18
20
ns
Auto precharge Write recovery + Precharge time
tRAL
tWR/tCK +
tRP/tCK
tWR/tCK +
tRP/tCK
tWR/tCK +
tRP/tCK
tCK
* AC specication is based on SAMSUNG components. Other DRAM manufactures specication may be different.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG265M72EFSU265D4N | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4NG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4S | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU265D4SG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4IM | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
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