參數(shù)資料
型號(hào): WV3DG72256V-AD2
英文描述: 2GB - 2x128Mx72 SDRAM, REGISTERED
中文描述: 2GB的- 2x128Mx72的SDRAM,注冊
文件頁數(shù): 3/9頁
文件大?。?/td> 264K
代理商: WV3DG72256V-AD2
WV3DG72256V-AD2
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
January 2006
Rev. 0
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
36
50
Units
V
V
°C
W
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: V
SS
= 0V, 0°C ≤
T
A
70°
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
CC
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-10
Typ
3.3
3.0
Max
3.6
Unit
V
V
V
V
V
μA
Note
V
CCQ
+0.3
0.8
0.4
10
1
2
I
OH
= -2mA
I
OL
= -2mA
3
Note: 1. V
IH
(max)= 5.6V AC. The overshoot voltage duration is ≤
3ns.
2. V
IL
(min)= -2.0V AC. The undershoot voltage duration is ≤
3ns.
3. Any input 0V ≤ V
IN
≤ V
CCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers
with Tri-State outputs.
CAPACITANCE
T
A
= 25 °C, f = 1MHz, V
CC
= 3.3V, V
REF
= 1.4V
±
200mV
Parameter
Input Capacitance (A0-A12, BA0-BA1)
Input Capacitance (RAS#, CAS#, WE#)
Symbol
C
IN1
C
IN2
Max
15
15
Unit
pF
pF
Input Capacitance (CKE0)
Input Capacitance (CLK0)
C
IN3
C
IN4
15
20
pF
pF
Input Capacitance (CS0# - CS3#)
C
IN5
15
pF
Input Capacitance (DQM0-DQM7)
C
IN6
15
pF
Data input/output capacitance (DQ0-DQ63), (CB0-BC7)
C
OUT
22
pF
PRELIMINARY*
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