參數(shù)資料
型號(hào): WSF512K16X-39G2M
廠(chǎng)商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, CQMA68
封裝: 22 MM SQUARE, HERMETIC SEALED, CERAMIC, QFP-68
文件頁(yè)數(shù): 3/14頁(yè)
文件大小: 146K
代理商: WSF512K16X-39G2M
11
MIXED
MODULES
11
White Microelectronics Phoenix, AZ (602) 437-1520
WSF512K16-XXX
FIG. 11
WRITE/ERASE/PROGRAM OPERATION FOR FLASH MEMORY, CS CONTROLLED
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
Addresses
FWE
OE
FCS
Data
5.0
V
5555H
PA
tWC
tWS
PD
D
7
D
OUT
tAH
tCPH
tCP
tDH
tDS
Data
Polling
tAS
tGHEL
A0H
tWHWH1
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