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參數(shù)資料
| 型號(hào)： | WSE128K16-XXX |
| 英文描述： | 128Kx16 SRAM/EEPROM MODULE |
| 中文描述： | 128Kx16的SRAM / EEPROM的模塊 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 580K |
| 代理商： | WSE128K16-XXX |
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WSE128K16-XXX
PRELIMINARY
9
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
EEPROM DATA POLLING
The WSE128K16-XXX offers a data polling feature for
the EEPROM which allows a faster method of writing to
the device. Figure 11 shows the timing diagram for this
function. During a byte or page write cycle, an attempted
read of the last byte written will result in the complement
of the written data on D7 (for each chip.) Once the write
cycle has been completed, true data is valid on all outputs
and the next cycle may begin. Data polling may begin at
any time during the write cycle.
FIGURE 10 – EEPROM DATA POLLING WAVEFORMS
EEPROM DATA POLLING CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C ≤ T
A
≤ +125°C
Parameter
Symbol
Data Hold Time
t
DH
OE# Hold Time
t
OEH
OE# To Output Valid
t
OE
Write Recovery Time
t
WR
Min
10
10
Max
Unit
ns
ns
ns
ns
55
0
EWE#
1-2
ECS#
1-2
OE#
ED
7
ADDRESS
t
OEH
t
DH
t
OE
t
WR
HIGH Z
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