參數(shù)資料
型號(hào)： WSE128K16-XXX
英文描述： 128Kx16 SRAM/EEPROM MODULE
中文描述： 128Kx16的SRAM / EEPROM的模塊
文件頁(yè)數(shù)： 3/15頁(yè)
文件大小： 580K
代理商： WSE128K16-XXX
WSE128K16-XXX
PRELIMINARY
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
V
IH
Input Low Voltage
V
IL
Operating Temp. (Mil.)
T
A
Min
4.5
2.0
-0.3
-55
Max
5.5
Unit
V
V
V
°C
V
CC
+ 0.3
+0.8
+125
EEPROM TRUTH TABLE
WE#
Mode
X
Standby
H
Read
L
Write
X
Out Disable
H
Write
Inhibit
X
CS#
H
L
L
X
X
X
OE#
X
L
H
H
X
L
Data I/O
High Z
Data Out
Data In
High Z/Data Out
SRAM TRUTH TABLE
OE# SWE#
Mode
X
X
Standby
L
H
Read
H
H
Read
X
L
Write
SCS#
H
L
L
L
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
DC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C ≤ T
A
≤ +125°C
Symbol
Conditions
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
I
LO
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
I
CC
x16
SCS# = V
IL
, OE# = ECS# = V
IH
, f = 5MHz, V
CC
= 5.5
ISB
ECS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
V
OL
I
OL
= 8.0mA, V
CC
= 4.5
V
OL
I
OL
= 2.1mA, V
CC
= 4.5
V
OH
I
OH
= -4.0mA, V
CC
= 4.5
V
OH
I
OH
= -1mA, V
CC
= 4.5
I
CC1
ECS# = V
IL
, OE# = SCS# = V
IH
V
OL
I
OL
= 2.1 mA, V
CC
= 4.5V
V
OH1
I
OH
= 400 μA, V
CC
= 4.5V
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 16 Mode
Standby Current
Min
Max
10
10
360
31.2
0.4
0.4
Unit
μA
μA
mA
mA
V
V
V
V
mA
V
V
SRAM Output Low Voltage
(35 to 45ns)
(70ns)
(35 to 45ns)
(70ns)
SRAM Output High Voltage
2.4
2.4
EEPROM Operating Supply Current x 16 Mode
EEPROM Output Low Voltage
EEPROM Output High Voltage
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
155
0.45
2.4
ABSOLUTE MAXIMUM RATINGS
Symbol
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Parameter
Min
-55
-65
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
T
A
T
STG
V
G
T
J
V
CC
-0.5
CAPACITANCE
T
A
= +25°C
Symbol
Conditions
C
OE
Parameter
OE# capacitance
WE#
1-4
capacitance
HIP (PGA)
CQFP G2T
CS#
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Max Unit
50
V
IN
= 0 V, f = 1.0 MHz
pF
C
WE
V
IN
= 0 V, f = 1.0 MHz
20
pF
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
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