參數(shù)資料
型號: WS512K32V-85
英文描述: 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊(存取時間85ns))
中文描述: 512Kx32 3.3靜態(tài)存儲器模塊(512Kx32,3.3伏,靜態(tài)內(nèi)存模塊(存取時間85ns))
文件頁數(shù): 3/8頁
文件大?。?/td> 212K
代理商: WS512K32V-85
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32V-XXX
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
4.0
Unit
°
C
°
C
V
°
C
V
-0.5
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.5
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
Symbol
C
OE
V
IN
= 0 V, f = 1.0 MHz
C
WE
V
IN
= 0 V, f = 1.0 MHz
Parameter
OE Capacitance
WE Capacitance
HIP (PGA)
CQFP G2T
CS Capacitance
Data I/O Capacitance
Address Input Capacitance
This parameter is guaranteed by design but not tested.
Conditions
Max
50
Unit
pF
pF
20
15
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
DC CHARACTERISTICS
(V
CC
= 3.3V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Units
Min
Max
10
10
100
2.0
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
V
CC
= 3.6, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 3.6
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 2.1mA, V
CC
= 3.0
I
OH
= -1.0mA, V
CC
= 3.0
μ
A
μ
A
mA
mA
V
V
I
CC x 32
I
SB
V
OL
V
OH
2.4
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
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