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參數(shù)資料
| 型號： | WS512K32V-15H1C |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 512Kx32 SRAM 3.3V MODULE |
| 中文描述： | 512Kx32 SRAM的3.3模塊 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 128K |
| 代理商： | WS512K32V-15H1C |
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32V-XXX
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military
I = Industrial
C = Commercial
-55
°
C to +125
°
C
-40
°
C to +85
°
C
0
°
C to +70
°
C
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400)
G2T = 22.4mm CQFP (Package 509)
G1U = 23.9mm Low Profile CQFP (Package 519)
ACCESS TIME (ns)
Low Voltage Supply 3.3V
±
10%
IMPROVEMENT MARK:
N = No Connect at pin 21 and 39 in HIP for Upgrades
ORGANIZATION, 512Kx32
User configurable as 1Mx16 or 2Mx8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
ORDERING INFORMATION
W S 512K 32 X V - XXX X X X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32V-15H1CA | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1I | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1IA | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1M | TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No |
| WS512K32V-15H1MA | TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32V-15H1CA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1IA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
| WS512K32V-15H1MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
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