參數(shù)資料
型號(hào)： WS512K32V-15H1I
廠商： Electronic Theatre Controls, Inc.
元件分類： SRAM
英文描述： 512Kx32 SRAM 3.3V MODULE
中文描述： 512Kx32 SRAM的3.3模塊
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 128K
代理商： WS512K32V-15H1I
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WS512K32V-XXX
512Kx32 SRAM 3.3V MODULE
PRELIMINARY*
FEATURES
I
Access Times of 15, 17, 20ns
I
Low Voltage Operation
I
Packaging
66-pin, PGA Type, 1.075 inch square, Hermetic
Ceramic HIP (Package 400)
68 lead, 22.4mm (0.88") CQFP, 4.6mm (0.180") high,
(Package 509)
68 lead, 23.9mm (0.940" sq.) Low Profile CQFP (G1U),
3.56mm (0.140") high, (Package 519)
I
Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8
I
Commercial, Industrial and Military Temperature Ranges
I
Low Voltage Operation:
3.3V
±
10% Power Supply
I
Low Power CMOS
I
TTL Compatible Inputs and Outputs
I
Fully Static Operation:
No clock or refresh required.
I
Three State Output.
I
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
I
Weight
WS512K32V-XG2TX - 8 grams typical
WS512K32V-XG1UX - 5 grams typical
WS512K32NV-XH1X - 13 grams typical
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
PIN CONFIGURATION FOR WS512K32NV-XH1X
TOP VIEW
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-18
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
BLOCK DIAGRAM
512K x 8
8
I/O
0-7
CS
1
1
512K x 8
8
I/O
8-15
2
512K x 8
8
I/O
16-23
3
512K x 8
8
I/O
24-31
4
A
0-18
OE
WE
CS
2
WE
CS
3
WE
CS
4
WE
May 2001 Rev. 6
相關(guān)PDF資料
PDF描述
WS512K32V-15H1IA 512Kx32 SRAM 3.3V MODULE
WS512K32V-15H1M TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
WS512K32V-15H1MA TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
WS512K32V-17G1UM 512Kx32 SRAM 3.3V MODULE
WS512K32V-17G1UMA 512Kx32 SRAM 3.3V MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WS512K32V-15H1IA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
WS512K32V-15H1M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
WS512K32V-15H1MA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
WS512K32V-17G1UC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
WS512K32V-17G1UCA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
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