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參數(shù)資料
| 型號： | WS512K32-XXX |
| 英文描述： | 512Kx32 SRAM Module(低功耗CMOS，128Kx32靜態(tài)RAM模塊（存取時間15，17，20，25，35，45，55ns）) |
| 中文描述： | 512Kx32 SRAM的模塊（低功耗的CMOS，128Kx32靜態(tài)內(nèi)存模塊（存取時間15,17,20,25,35,45,55納秒）） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 188K |
| 代理商： | WS512K32-XXX |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K32-XXX /
EDI8C32512CA
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
WE
1-4
capacitance
HIP (PGA)
CQFP G4T
CQFP G2T/E
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
20
50
20
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
Max
10
10
540
80
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
I
LI
I
LO
V
CC
= 5.5, V
IN
= G
ND
to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA for 15 - 35ns,
I
OL
= 2.1mA for 45 - 55ns, Vcc = 4.5
I
OH
= -4.0mA for 15 - 35ns,
I
OH
= -1.0mA for 45 - 55ns, Vcc = 4.5
μ
A
μ
A
mA
mA
V
I
CC x 32
I
SB
V
OL
Output High Voltage
V
OH
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
= 0.3V
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Units
Min
2.0
Typ
Max
5.5
28*
Data Retention Supply Voltage
Data Retention Current
V
DR
I
CCDR1
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
3.2
mA
* Also available in Low Power version, please call factory for information.
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
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