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參數(shù)資料
| 型號： | WS512K32-55 |
| 英文描述： | 512Kx32 SRAM Module(512Kx32靜態(tài)RAM模塊（存取時間55ns）) |
| 中文描述： | 512Kx32 SRAM的模塊（512Kx32靜態(tài)內(nèi)存模塊（存取時間55ns）） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 150K |
| 代理商： | WS512K32-55 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32-XXX
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G4T
CQFP G2T/G1U
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
pF
20
50
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
Parameter
Symbol
Conditions
Units
Min
Max
10
10
660
80
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
I
LI
I
LO
V
CC
= 5.5, V
IN
= G
ND
to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA for 15 - 35ns,
I
OL
= 2.1mA for 45 - 55ns, Vcc = 4.5
I
OH
= -4.0mA for 15 - 35ns,
I
OH
= -1.0mA for 45 - 55ns, Vcc = 4.5
μ
A
μ
A
mA
mA
V
I
CC x 32
I
SB
V
OL
Output High Voltage
V
OH
2.4
V
NOTE:
DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Units
Min
2.0
Max
5.5
28
16
Data Retention Supply Voltage
Data Retention Current
Low Power Data Retention
Current (WS512K32L-XXX)
V
DR
I
CCDR1
I
CCDR2
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
CC
= 3V
V
mA
mA
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
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|---|---|
| WS512K32-XXX | 512Kx32 SRAM Module(低功耗CMOS，128Kx32靜態(tài)RAM模塊（存取時間15，17，20，25，35，45，55ns）) |
| WS512K32BV-15E | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（BiCOMS,存取時間15ns）) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32-55G2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC |
| WS512K32-55G2TCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
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