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參數(shù)資料
| 型號(hào)： | WF8M32-XG4DX5 |
| 英文描述： | Flash MCP |
| 中文描述： | 閃存MCP的 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 122K |
| 代理商： | WF8M32-XG4DX5 |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-100
-120
-150
Unit
Min
100
Max
Min
120
Max
Min
150
Max
Write Cycle Time
t
AVAV
t
WC
ns
Chip Select Setup Time
t
ELWL
t
CS
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
50
50
50
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
50
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
50
50
50
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
μ
s
Sector Erase (2)
t
WHWH2
15
15
15
sec
Read Recovery Time before Write
t
GH
W
L
0
0
0
μ
s
V
CC
Setup Time
t
VCS
50
50
50
μ
s
Chip Programming Time
44
44
44
sec
Chip Erase Time (3)
256
256
256
sec
Output Enable Hold Time (4)
t
OEH
10
10
10
ns
RESET Pulse Width
t
RP
500
500
500
ns
NOTES:
1. Typical value for t
WHWH1
is 7
μ
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-100
-120
-150
Unit
Min
100
Max
Min
120
Max
Min
150
Max
Read Cycle Time
t
AVAV
t
RC
ns
Address Access Time
t
AVQV
t
ACC
100
120
150
ns
Chip Select Access Time
t
ELQV
t
CE
100
120
150
ns
Output Enable to Output Valid
t
GLQV
t
OE
50
50
55
ns
Chip Select High to Output High Z (1)
t
EHQZ
t
DF
30
30
35
ns
Output Enable High to Output High Z (1)
t
GHQZ
t
DF
30
30
35
ns
Output Hold from Addresses, CS or OE Change,
whichever is First
t
AXQX
t
OH
0
0
0
ns
RST Low to Read Mode (1)
t
Ready
20
20
20
μ
s
1. Guaranteed by design, not tested.
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