參數(shù)資料
型號: WEDPS512K32LV-15BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PBGA143
封裝: 16 X 18 MM, PLASTIC, BGA-143
文件頁數(shù): 2/7頁
文件大?。?/td> 268K
代理商: WEDPS512K32LV-15BC
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPS512K32V-XBX
June 2004
Rev. 5
NOTE: Refer to Application Note "PBGA Thermal Resistance Correlation" at
www.whiteedc.com in the application notes section for modeling conditions.
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
DC CHARACTERISTICS
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Units
Input Leakage Current
ILI
VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current (x 32 Mode)
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6V
400
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6V
120
mA
Output Low Voltage
VOL
IOL = 4.0mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.
Contact factory for low power option.
DATA RETENTION CHARACTERISTICS (WEDPS512K32LV-XBX only)
-55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Units
Data Retention Voltage
VCC
VCC = 2.19V
2.19
V
Data Retention Current
ICCDR
CS = VCC - 0.2V
8.0
mA
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
CAPACITANCE
Ta = +25°C
Parameter
Symbol
Conditions
Max
Unit
OE# capacitance
COE
VIN = 0 V, f = 1.0 MHz
30
pF
WE1-4# capacitance
CWE
VIN = 0 V, f = 1.0 MHz
10
pF
CS1-4# capacitance
CCS
VIN = 0 V, f = 1.0 MHz
10
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
10
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
30
pF
This parameter is guaranteed by design but not tested.
BGA THERMAL RESISTANCE
Parameter
Symbol
Max
Unit
Note
Junction to Ambient (No Airow)
Theta JA
16.9
°C/W
1
Junction to Ball
Theta JB
11.3
°C/W
1
Junction to Case (Top)
Theta JC
9.8
°C/W
1
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