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參數(shù)資料
| 型號： | WEDPN16M64VR-100B2C |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| 封裝： | 25 X 21 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 519K |
| 代理商： | WEDPN16M64VR-100B2C |
WEDPN16M64VR-XB2X
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2005
Rev. 0
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11, 29)
Parameter
Symbol
-133
-125
-100
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos. edge)
CL = 3
tAC
5.4
5.8
6
ns
CL = 2
tAC
666
ns
Address hold time
tAH
0.8
1
ns
Address setup time
tAS
1.5
2
ns
CLK high-level width
tCH
2.5
3
ns
CLK low-level width
tCL
2.5
3
ns
Clock cycle time (22)
CL = 3
tCK
7.5
8
10
ns
CL = 2
tCK
10
15
ns
CKE hold time
tCKH
0.8
1
ns
CKE setup time
tCKS
1.5
2
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
1.5
2
ns
Data-in hold time
tDH
0.8
1
ns
Data-in setup time
tDS
1.5
2
ns
Data-out high-impedance time (10)
CL = 3 (10)
tHZ
5.4
5.8
6
ns
CL = 2 (10)
tHZ
66
6
ns
Data-out low-impedance time
tLZ
11
1
ns
Data-out hold time (load)
tOH
33
3
ns
Data-out hold time (no load) (26)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
44
120,000
50
120,000
50
120,000
ns
ACTIVE to ACTIVE command period
tRC
66
70
ns
ACTIVE to READ or WRITE delay
tRCD
20
ns
Refresh period (8,192 rows) – Commercial, Industrial
tREF
64
ms
Refresh period (8,192 rows) – Military
tREF
16
ms
AUTO REFRESH period
tRFC
66
70
ns
PRECHARGE command period
tRP
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
15
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK + 7ns
—
(24)
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
75
80
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPN16M64VR-100B2I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 REGISTERED SYNCHRONOUS DRAM |
| WEDPN16M64VR-100B2M | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 REGISTERED SYNCHRONOUS DRAM |
| WEDPN16M64VR-100BC | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk |
| WEDPN16M64VR-100BI | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk |
| WEDPN16M64VR-100BM | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk |
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