參數(shù)資料
型號(hào): WEDPN16M64VR-100B2C
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類(lèi): DRAM
英文描述: 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219
封裝: 25 X 21 MM, PLASTIC, BGA-219
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 519K
代理商: WEDPN16M64VR-100B2C
WEDPN16M64VR-XB2X
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2005
Rev. 0
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-5
5
μA
Output Leakage Current: I/Os are disabled; 0V VOUT VCC
IOZ
-5
5
μA
Output High Voltage (IOUT = -4mA)
VOH
2.4
V
Output Low Voltage (IOUT = 4mA)
VOL
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQSupply relative to VSS
-1 to 4.6
V
Voltage on NC or I/O pins relative to VSS
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 2)
Parameter
Symbol Max
Unit
Input Capacitance: CLK
CI1
14
pF
Addresses, BA0-1 Input Capacitance
CA
7pF
Input Capacitance: All other input-only pins
CI2
8
pF
Input/Output Capacitance: I/Os
CIO
8
pF
Register Functions OE/LE
CREG
14
pF
IDD SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
700
mA
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
240
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
750
mA
Self Refresh Current: CKE 0.2V Commercial and Industrial temperatures only (27, 28)
ICC7
10
mA
BGA THERMAL RESISTANCE
Description
Symbol Max
Unit
Notes
Junction to Ambient (No Airow)
θJA
16.8
°C/W
1
Junction to Ball
θJB
12.2
°C/W
1
Junction to Case (Top)
θJC
6.5
°C/W
1
NOTE: Refer to PBGA Thermal Resistance Correlation Application note at
www.whiteedc.com in the application notes section for modeling conditions.
相關(guān)PDF資料
PDF描述
W3DG63126V10D2 128M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
W3E232M16S-266STIG 64M X 16 DDR DRAM, 0.7 ns, PDSO66
WPS256K16T-20LJC 256K X 16 STANDARD SRAM, 20 ns, PDSO44
WMF256K8-70FEM5A 256K X 8 FLASH 5V PROM, 70 ns, CDFP32
WMS512K8BV-20DEMEA 512K X 8 STANDARD SRAM, 20 ns, CDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WEDPN16M64VR-100B2I 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 REGISTERED SYNCHRONOUS DRAM
WEDPN16M64VR-100B2M 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 REGISTERED SYNCHRONOUS DRAM
WEDPN16M64VR-100BC 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk
WEDPN16M64VR-100BI 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk
WEDPN16M64VR-100BM 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk