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參數(shù)資料
| 型號(hào)： | WE512K8200CCA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| 封裝： | HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 678K |
| 代理商： | WE512K8200CCA |
WE512K8, WE256K8,
WE128K8-XCX
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DATA POLLING
Operation with data polling permits a faster method of
writing to the EEPROM. The actual time to complete the
memory programming cycle is faster than the guaranteed
maximum.
The EEPROM features a method to determine when
the internal programming cycle is completed. After a
write cycle is initiated, the EEPROM will respond to read
cycles to provide the microprocessor with the status
of the programming cycle. The status consists of the
last data byte written being returned with data bit I/O7
complemented during the programming cycle, and I/O7
true after completion.
Data polling allows a simple bit test operation to
determine the status of the EEPROM. During the internal
programming cycle, a read of the last byte written will
produce the complement of the data on I/O7. For example,
if the data written consisted of I/O7 = HIGH, then the data
read back would consist of I/O7 = LOW.
A polled byte write sequence would consist of the following
steps:
1.
write byte to EEPROM
2.
store last byte and last address written
3.
release a time slice to other tasks
4.
read byte from EEPROM - last address
5.
compare I/O7 to stored value
a) If different, write cycle is not completed, go to
step 3.
b) If same, write cycle is completed, go to step 1 or
step 3.
DATA POLLING AC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
512Kx8
256Kx8
128Kx8
Unit
Min
Max
Min
Max
Min
Max
Data Hold Time
tDH
10
0
ns
Output Enable Hold Time
tOEH
10
0
ns
Output Enable To Output Delay
tOE
100
ns
Write Recovery Time
tWR
000
ns
FIGURE 8 – DATA POLLING WAVEFORMS
OE#
ADDRESS
CS1-4#
WE1-4#
I/O7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WE512K8-200CMA | 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| WF4M32-150H2I5 | 4M X 32 FLASH 5V PROM MODULE, 150 ns, CPGA66 |
| WF4M32-120G4TM5 | 4M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| W3HG128M64EEU534D4ISG | 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE512K8-200CCA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CI | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 200NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE512K8-200CIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CM | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 200NS, 32 DIP, MIL-SCREENED - Bulk |
| WE512K8-200CMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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