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參數(shù)資料
| 型號(hào)： | WE512K8200CCA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | PROM |
| 英文描述： | 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| 封裝： | HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 678K |
| 代理商： | WE512K8200CCA |
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WE512K8, WE256K8,
WE128K8-XCX
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
WRITE CYCLE TIMING
Figures 6 and 7 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE
line low. The write cycle begins when the last of either CS#
or WE# goes low.
The WE# line transition from high to low also initiates
an internal 150μsec delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150μsec time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
WRITE
Write operations are initiated when both CS# and WE#
are low and OE# is high. The EEPROM devices support
both a CS# and WE# controlled write cycle. The address is
latched by the falling edge of either CS# or WE#, whichever
occurs last.
The data is latched internally by the rising edge of either
CS# or WE#, whichever occurs rst. A byte write operation
will automatically continue to completion.
AC WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
512K x 8
256K x 8
128K x 8
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time, TYP = 6mS
tWC
10
ms
Address Set-up Time
tAS
10
30
ns
Write Pulse Width (WE# or CS#)
tWP
150
ns
Chip Select Set-up Time
tCS
000
ns
Address Hold Time (1)
tAH
125
50
ns
Data Hold Time
tDH
10
0
ns
Chip Select Hold Time
tCH
000
ns
Data Set-up Time
tDS
100
ns
Output Enable Set-up Time
tOES
10
30
ns
Output Enable Hold Time
tOEH
10
0
ns
Write Pulse Width High
tWPH
50
ns
NOTES:
1. A17 and A18 must remain valid through WE# and CS# low pulse, for 512K x 8.
A15, A16, and A17 must remain valid through WE# and CS# low pulse, for 256K x 8.
A15 and A16 must remain valid through WE# and CS# low pulse, for 128K x 8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WE512K8-200CMA | 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| WF4M32-150H2I5 | 4M X 32 FLASH 5V PROM MODULE, 150 ns, CPGA66 |
| WF4M32-120G4TM5 | 4M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| W3HG128M64EEU534D4ISG | 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 |
| WED7G2G0IDE33ADC25 | 128M X 16 FLASH 3.3V PROM, DMA144 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE512K8-200CCA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CI | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 200NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE512K8-200CIA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CM | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 200NS, 32 DIP, MIL-SCREENED - Bulk |
| WE512K8-200CMA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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