參數(shù)資料
型號: W946432AD-6
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 2M X 32 DDR DRAM, 0.1 ns, PQFP100
文件頁數(shù): 18/39頁
文件大?。?/td> 577K
代理商: W946432AD-6
W946432AD
PRELIMINARY DATE: 11/13/01
25
.
Figure14:WRITE TO WRITE DQSS, NON – CONSECUTIVE
WRITE
NOP
WRITE
NOP
Bank,
Col b
Bank,
Col n
DI
b
DI
n
DQ
DM
DQS
ADDRESS
COMMAND
CK
DON'T CARE
WRITE TO WRITE DQSS, NON - CONSECUTIVE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
tDQSS
DI b, etc. = Data In for column b, etc.
A non-interrupted burst of 4 is shown
Each Write command may be to any bank, and may be to the same or different devices
Depending on external components
Figure15:RANDOM WRITE CYCLES – DQSS
RANDOM WRITE CYCLES - DQSS
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
WRITE
Bank,
Col b
Bank,
Col x
Bank,
Col n
Bank,
Col a
Bank,
Col g
tDQSS
DI
b
DI
a
DON'T CARE
DI
b'
DI
x
DI
x'
DI
n
DI
n'
DI
a'
DQ
DM
DQS
ADDRESS
COMMAND
CK
DI b, etc. = Data In for column b, etc.
b', etc. = the next Data In following DI b, etc. according to the programmed burst order
Programmed Burst Length = 2, 4 in cases shown
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