參數(shù)資料
型號(hào): W946432AD-6
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 2M X 32 DDR DRAM, 0.1 ns, PQFP100
文件頁(yè)數(shù): 14/39頁(yè)
文件大?。?/td> 577K
代理商: W946432AD-6
W946432AD
21
Figure8:RANDOM READ ACCESSES – REQUIRED CAS LATENCIES
READ
NOP
COMMAND
CK
DQS
DQ
DON'T CARE
Bank,
RANDOM READ ACCESSES - REQUIRED CAS LATENCIES
ADDRESS
CL=3
Col n
NOP
DO
n
DO
b
Bank,
Col b
READ
Bank,
Col x
Bank,
Col g
DO
n'
DO
x
DO
x'
DO
g
DO
b'
DO n, etc. = Data Out from column n, etc.
n', etc. = the next Data Out following DO n, etc. according to the programmed burst order
Burst Length = 4
Reads are to active rows in any banks
Shown with nominal tAC, tDQSCK, and tDQSQ
Figure9:BURST READ STOP– REQUIRED CAS LATENCIES
NOP
BST
READ
NOP
COMMAND
CK
DQS
DQ
DON'T CARE
Bank,
TERMINATING A READ BURST - REQUIRED CAS LATENCIES
ADDRESS
CL=3
Col n
DO
n
DO n = Data Out from column n
Cases shown are bursts of 8 terminated after 4 data elements
Shown with nominal tAC, tDQSCK, and tDQSQ
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