參數(shù)資料
型號(hào)： W3H32M64E-667SBC
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： DRAM
英文描述： 32M X 64 DDR DRAM, 0.65 ns, PBGA208
封裝： 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù)： 26/30頁(yè)
文件大?。?/td> 958K
代理商： W3H32M64E-667SBC
W3H32M64E-XSBX
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 11
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE – 1 BALL DESCRIPTIONS
(continued)
Symbol
Type
Description
A0-A12
Input
Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW,
bank selected by BA1–BA0) or all banks (A10 HIGH) The address inputs also provide the op-code during a LOAD
MODE command.
DQ0-63
I/O
Data input/output: Bidirectional data bus
UDQS, UDQS#
I/O
Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
LDQS, LDQS#
I/O
Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
VCC
Supply
Power Supply: 1.8V ±0.1V
VCCQ
Supply
Power Supply: I/O; VCCQ is common to VCC
VREF
Supply
SSTL_18 reference voltage.
VSS
Supply
Ground
NC
-
No connect: These balls should be left unconnected.
DNU
-
Future use
相關(guān)PDF資料
PDF描述
W3H32M64EA-400SBC 32M X 64 DDR DRAM, PBGA208
W3H32M64EA-667SBM 32M X 64 DDR DRAM, PBGA208
W3H32M64EA-667SBC 32M X 64 DDR DRAM, PBGA208
W3H32M72E-667SB2M 32M X 72 DDR DRAM, 0.65 ns, PBGA208
W3H32M72E-667SBC 32M X 72 DDR DRAM, 0.65 ns, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H32M64E-667SBI 制造商:Microsemi Corporation 功能描述:32M X 64 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Trays 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H32M64E-667SBM 制造商:Microsemi Corporation 功能描述:32M X 64 DDR2, 1.8V, 667MHZ, 208PBGA MIL-TEMP. - Bulk
W3H32M64EA-400SBM 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H32M64E-ES 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H32M64E-ESC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
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