參數(shù)資料
型號: W3H128M72ER-667SBC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM, 0.5 ns, PBGA255
封裝: 23 X 21 MM, 1.27 MM PITCH, PLASTIC, BGA-255
文件頁數(shù): 21/34頁
文件大?。?/td> 1028K
代理商: W3H128M72ER-667SBC
W3H128M72ER-XNBX
28
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2009
Rev. 6
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC TIMING PARAMETERS
(continued)*
-55°C ≤ TA < +125°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Parameter
Symbol
667Mbs CL6
533Mbs CL5
400Mbs CL4
Unit
Min
Max
Min
Max
Min
Max
Data
DQ hold skew factor
tQHS
-
400
-
400
-
450
ps
DQ output access time from CK/
CK#
tAC
-500
+500
-500
+500
-600
+600
ps
Data-out high impedance window
from CK/CK#
tHZ
tAC(MAX)
ps
DQS Low-Z window from CK/CK#
tLZ1
tAC(MN)
tAC(MAX)
tAC(MN)
tAC(MAX)
tAC(MN)
tAC(MAX)
ps
DQ Low-Z window from CK/CK#
tLZ2
2*tAC(MN)
tAC(MAX)
2*tAC(MN)
tAC(MAX)
2*tAC(MN)
tAC(MAX)
ps
DQ and DM input setup time
relative to DQS
tDSa
350
400
ps
tDHa
350
400
ps
tDSb
100
150
ps
tDHb
225
275
ps
DQ and DM input pulse width (for
each input)
tDIPW
0.35
ps
Data hold skew factor
tQHS
400
450
ps
DQ-DQS hold, DQS to rst DQ to
go nonvalid, per access
tQH
tHP - tQHS
ps
Data valid output window (DVW)
tDVW
tQH - tDQSQ
ns
Data
Strobe
DQS input high pulse width
tDQSH
0.35*tCK
tCK
DQS input low pulse width
tDQSL
0.35*tCK
tCK
DQS output access time fromCK/
CK#
tDQSCK
-450
+450
-450
+450
-500
+500
ps
DQS falling edge to CK rising -
setup time
tDSS
0.2*tCK
tCK
DQS falling edge from CK rising -
hold time
tDSH
0.2*tCK
tCK
DQS-DQ skew, DOS to last DQ
valid, per group, per access
tDQSQ
240
300
350
ps
DQS read preamble
tRPRE
0.9*tCK
1.1*tCK
0.9*tCK
1.1*tCK
0.9*tCK
1.1*tCK
tCK
DQS read postamble
tRPST
0.4*tCK
0.6*tCK
0.4*tCK
0.6*tCK
0.4*tCK
0.6*tCK
tCK
DQS write preamble setup time
tWPRES
000
ps
DQS write preamble
tWPRE
0.35*tCK
0.25*tCK
0.25
tCK
DQS write postamble
tWPST
0.4*tCK
0.6*tCK
0.4*tCK
0.6*tCK
0.4*tCK
0.6*tCK
tCK
Positive DQS latching edge to
associated clock edge
tDQSS
-0.25*tCK
0.25*tCK
-0.25*tCK
0.25*tCK
-0.25*tCK
0.25*tCK
tCK
Write command to rst DQS
latching transition
WL-tDQSS
WL+tDQSS
WL-tDQSS
WL+tDQSS
WL-tDQSS
WL+tDQSS
tCK
相關(guān)PDF資料
PDF描述
W3H128M72ER-667SBM 128M X 72 DDR DRAM, 0.5 ns, PBGA255
W3EG72126S262AJD3SG 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W3EG72126S265JD3SG 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W3H128M72E0533SBM DDR DRAM, PBGA208
W3H128M72E2-533NBC 128M X 72 DDR DRAM, 0.5 ns, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H13C1048AT 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors
W3H13C1048AT1A 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體:
W3H13C1048AT1F 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體:
W3H15C1038AT 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors
W3H15C1038AT1A 功能描述:饋通電容器 50volt .01uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: