參數(shù)資料
型號: W3H128M72ER-533SBM
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM, 0.5 ns, PBGA255
封裝: 23 X 21 MM, 1.27 MM PITCH, PLASTIC, BGA-255
文件頁數(shù): 17/34頁
文件大?。?/td> 1028K
代理商: W3H128M72ER-533SBM
W3H128M72ER-XNBX
24
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2009
Rev. 6
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply voltage
VCC
1 .7
1 .8
1 .9
V
1
I/O Reference voltage
VREF
0.49 x VCCQ
0.50 x VCCQ
0.51 x VCCQ
V2
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF + 0.04
V
3
Notes:
1.
VCC and VCCQ are tied on the device.
2.
VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MIN
MAX
U nit
VCC/ VCCQ
Voltage on VCC pin relative to VSS
-0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage temperature
-55
125
°C
IL
Input leakage current; Any input 0V<VIN<VCC; Other pins
not under test = 0V
-20
20
μA
IOZ
Output leakage current;
0V<VOUT<VCC; DQs and ODT are disabled
-5
5
μA
IVREF
VREF leakage current; VREF = Valid VREF level
-8
8
μA
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 1.8V
Parameter
Symbol
Max
Unit
Input capacitance (A0 - A13, BA0 - BA2 ,CS#, RAS#,CAS#,WE#, CKE, ODT)
CIN1
TBD
pF
Input capacitance CK, CK#
CIN2
TBD
pF
Input capacitance DM, DQS, DQS#
CIN3
TBD
pF
Input capacitance DQ0 - 63
COUT
TBD
pF
相關(guān)PDF資料
PDF描述
W3H128M72ER-667SBC 128M X 72 DDR DRAM, 0.5 ns, PBGA255
W3H128M72ER2-400SBI 128M X 72 DDR DRAM, 0.6 ns, PBGA255
W3H32M64E-400SBM 32M X 64 DDR DRAM, 0.6 ns, PBGA208
W3H32M64E-667SBC 32M X 64 DDR DRAM, 0.65 ns, PBGA208
W3H32M64EA-400SBC 32M X 64 DDR DRAM, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H13C1048AT 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors
W3H13C1048AT1A 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體:
W3H13C1048AT1F 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體:
W3H15C1038AT 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors
W3H15C1038AT1A 功能描述:饋通電容器 50volt .01uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: