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參數(shù)資料
| 型號： | W3H128M72E-667SBI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 1.25 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 25/32頁 |
| 文件大?。?/td> | 988K |
| 代理商： | W3H128M72E-667SBI |
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W3H128M72E-XSBX
31
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Document Title
128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
Revision History
Rev #
History
Release Date
Status
Rev 0
Initial Release
May 2008
Advanced
Rev 1
Changes (Pg. 1, 2, 22, 33)
1.1 Weight 4 grams max
1.2 Changed A0-12 to A0-13
1.3 Added input/output capacitance
1.4 Added BGA thermal resistance
September 2008
Advanced
Rev 2
Change (Pg. 1)
2.1 Change SPACE SAVINGS to space savings
October 2008
Preliminary
Rev 3
Change (Pg. 24)
3.1 Reduce DDR2 ICC7
CL6 from (1,975 to 1,580) mA
CL5 from (1,775 to 1,420) mA
CL4 from (1,775 to 1,420) mA
October 2008
Preliminary
Rev 4
Change (Pg. 1, 5, 6, 19, 22, 23, 30)
4.1 Remove "P" from FBGA, take out "Actual Size" off of
Figure 1
4.2 Remove VCCQ; and I/O + core; VCCQ is common to VCC in
VCC box
4.3 Change page 8 to page 7 in initialization paragraph
4.4 Change tWT to tWT
4.5 In BGA thermal resistance, change note to read - to obtain
the junction temperature increase, multiply the thermal
resistance by the power dissipated in each die in the MCP
4.6 In DC operating conditions add "and" to note 1
4.7 Put "/" in between Mbs to read Mb/s
4.8 Change data sheet to nal
December 2008
Final
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H128M72E-2400SBI | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E-400SBI | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E-2400SBC | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E0667SBM | DDR DRAM, PBGA208 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H128M72E-667SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 667MHZ, 208PBGA MIL-TEMP. - Bulk |
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| W3H13C1048AT1F | 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
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