- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄68456 > W3H128M72E-667SBI (WHITE ELECTRONIC DESIGNS CORP) 128M X 72 DDR DRAM, 1.25 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號(hào)： | W3H128M72E-667SBI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 1.25 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 16/32頁 |
| 文件大?。?/td> | 988K |
| 代理商： | W3H128M72E-667SBI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
W3H128M72E-XSBX
23
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
BGA THERMAL RESISTANCE
Description
Symbol
Typical
Units
Notes
Junction to Ambient (No Airow)
Theta JA
19.7
°C/W
1
Junction to Ball
Theta JB
20.6
°C/W
1
Junction to Case (Top)
Theta JC
10.8
°C/W
1
Note: To obtain the junction temperature increase, multiply the thermal resistance by the power dissipated in each die in the mcp.
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.1 25
VCCQ + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
VIH(AC)
VREF + 0.250
—
V
AC Input High (Logic 1) Voltage DDR2-667
VIH(AC)
VREF + 0.200
—
V
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL(AC)
—
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL(AC)
—
VREF - 0.200
V
ODT DC ELECTRICAL CHARACTERISTICS
All voltages referenced to VSS
Parameter
Symbol
Min
Nom
Max
Unit
Notes
RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1
RTT1(EFF)
52
75
97
Ω
1
RTT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0
RTT2(EFF)
105
150
195
Ω
1
RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1
RTT3(EFF)
35
50
65
Ω
1
Deviation of VM with respect to VCCQ/2
VM
-6
6
%
2
Note: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.
2. Measure voltage (VM) at tested ball with no load
RTT(EFF) = VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC))
VM =
(2 x VM - 1) x 100
VCCQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H128M72E-2400SBI | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E-400SBI | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E-2400SBC | 128M X 72 DDR DRAM, 1.35 ns, PBGA208 |
| W3H128M72E0667SBM | DDR DRAM, PBGA208 |
| W3H128M72E0667SBI | DDR DRAM, PBGA208 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H128M72E-667SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 667MHZ, 208PBGA MIL-TEMP. - Bulk |
| W3H13C1048AT | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors |
| W3H13C1048AT1A | 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
| W3H13C1048AT1F | 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
| W3H15C1038AT | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。