- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140346 > W3H128M72E-533NBM (WHITE ELECTRONIC DESIGNS CORP) 128M X 72 DDR DRAM, 0.5 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H128M72E-533NBM |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 6/31頁 |
| 文件大小： | 991K |
| 代理商： | W3H128M72E-533NBM |
第1頁第2頁第3頁第4頁第5頁當前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
W3H128M72E-XNBX
14
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
POSTED CAS ADDITIVE LATENCY (AL)
Posted CAS additive latency (AL) is supported to make
the command and data bus efficient for sustainable
bandwidths in DDR2 SDRAM. Bits E3–E5 dene the value
of AL, as shown in Figure 7. Bits E3–E5 allow the user
to program the DDR2 SDRAM with an inverse AL of 0, 1,
2, 3, or 4 clocks. Reserved states should not be used as
unknown operation or incompatibility with future versions
may result.
In this operation, the DDR2 SDRAM allows a READ or
WRITE command to be issued prior to tRCD (MIN) with
the requirement that AL ≤ tRCD (MIN). A typical application
using this feature would set AL = tRCD (MIN) - 1x tCK. The
READ or WRITE command is held for the time of the AL
before it is issued internally to the DDR2 SDRAM device.
RL is controlled by the sum of AL and CL; RL = AL+CL.
Write latency (WL) is equal to RL minus one clock; WL =
AL + CL - 1 x tCK.
0
1
0
1
Mode Register Definition
M16
0
0
1
M15
High Temperature Self Refresh rate enable
Industrial temperature option;
use if T
C ex cee ds 85° C
E7
0
1
M17
0
0
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
Commercial temperature default
A9
A7 A6 A5 A4 A3
A8
A2
A1 A0
Extended Mode
Register (Ex)
Address Bus
97
6
5
4
3
82
1
0
A10
A12
A11
BA0
BA1
10
11
12
13
0
00
0
14
15
A13
A14
EMR2
BA2
16
17
FIGURE 8 – EXTENDED MODE REGISTER 2 (EMR2) DEFINITION
Note: 1. E14 (A14)-E8(A8) and E6 (A6) - E0 (A0) are reserved for future use and
must be programmed to "0." A14 is not used in this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS57C71C-45D | 32K X 8 UVPROM, 45 ns, CDIP28 |
| WF512K32-150G4M5 | 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| WED3DG6332V7D2 | 32M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WV3HG264M72EEU806D7SG | 128M X 72 DDR DRAM MODULE, DMA244 |
| WV3DG72256V7AD2SG | 256M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H128M72E-533SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-533SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533SBM | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-667SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 667MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-667SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。