參數(shù)資料
型號: W3EG6433S265D3
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
封裝: DIMM-184
文件頁數(shù): 11/12頁
文件大?。?/td> 262K
代理商: W3EG6433S265D3
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6433S-D3
-JD3
November 2005
Rev. 2
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
AC Characteristics
335
(DDR333@CL=2.5)
262
(DDR266@CL=2.0)
263
(DDR266@CL=2.0)
265
(DDR266@CL=2.5)
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Units
Notes
Output Slew Rate (x4,x8)
tSL(O)
1.0
4.5
1.0
4.5
1.0
4.5
1.0
4.5
V/ns
Output Slew Rate Matching Ratio (rise
to fall)
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5
0.67
1.5
ns
Mode register set cycle time
tMRD
12
15
ns
j, k
DQ & DM setup time to DQS
tDS
0.5
ns
j, k
DQ & DM hold time to DQS
tDH
0.45
0.5
ns
8
Control & Address input pulse width
tIPW
2.2
ns
8
DQ & DM input pulse width
tDIPW
1.75
ns
Power down exit time
tRDEX
6
7.5
ns
Exit self refresh to non-Read command
tXSRD
75
ns
Exit self refresh to read command
tXSRD
200
tCK
Refreash interval time
tREFI
15.6
us
4
Output DQS valid window
tQH
tHP-tQHS
-tHP-tQHS
ns
11
Clock half period
tQH
tCLmin or
tchmin
-
tCLmin or
tchmin
-
tCLmin or
tchmin
-
tCLmin or
tchmin
ns
10, 11
Data hold skew factor
tQHS
0.55
0.75
ns
11
DQS write postamble time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
2
Active to Read with Auto precharge
command
tRAP
18
20
Autoprecharge write recovery &
Precharge time
tXSNR
tWR/tCK
+
tRP/tCK)
tWR/tCK
+
tRP/tCK)
tWR/tCK
+
tRP/tCK)
tWR/tCK
+
tRP/tCK)
tCK
13
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