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參數(shù)資料
| 型號(hào)： | W3EG264M64EFSU335D4S |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封裝： | SODIMM-200 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 206K |
| 代理商： | W3EG264M64EFSU335D4S |
W3EG264M64EFSU-D4
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
May 2007
Rev. 1
PRELIMINARY
IDD SPECIFICATIONS AND CONDITIONS
0°C ≤ TA ≤ +70°C; VCC, VCCQ = +2.5V ±0.2V
DDR400: VCC = VCCQ = +2.6V ±0.2V
PARAMETER/CONDITION
SYM
MAX
DDR400
@CL=3
DDR333
@CL=2.5
DDR266
@CL=2
DDR266
@CL=2.5 UNITS
OPERATING CURRENT: One device bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK
(MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs
changing once every two clock cycles
ICC0
2475
2070
1845
mA
OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; tRC = tRC
(MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock
cycle
ICC1
2745
2340
2115
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down
mode; tCK = tCK (MIN); CKE = (LOW)
ICC2P
90
mA
IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; tCK = tCK (MIN); CKE =
HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ,
DQS, and DM
ICC2F
990
810
720
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down
mode; tCK = tCK (MIN); CKE = LOW
ICC3P
810
630
540
mA
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; tRC =
tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address
and other control inputs changing once per clock cycle
ICC3N
1080
900
810
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA
ICC4R
2790
2385
2115
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS
inputs changing twice per clock cycle
ICC4W
2790
2295
2025
mA
AUTO REFRESH BURST CURRENT:
tREFC = tRFC (MIN)
ICC5
4185
3510
3330
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
ICC6
90
mA
OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with auto
precharge, tRC = minimum tRC allowed; tCK = tCK (MIN); Address and control inputs change
only during Active READ, or WRITE commands
ICC7
5130
4545
3960
mA
Note: ICC specication is based on
SAMSUNG components. Other DRAM manufactures specication may be different.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG264M64EFSU335D4-X | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG264M64EFSU403D4-X | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG264M64EFSU-D4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG264M64EFSUXXXD4-MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG264M64EFSUXXXD4-SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA |
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