參數(shù)資料
型號: W3EG264M64EFSU335D4S
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
封裝: SODIMM-200
文件頁數(shù): 1/11頁
文件大?。?/td> 206K
代理商: W3EG264M64EFSU335D4S
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
May 2007
Rev. 1
PRELIMINARY*
W3EG264M64EFSU-D4
White Electronic Designs
1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA
FEATURES
Fast data transfer rate: PC-2100, PC-2700 and
PC3200
Clock speeds of 133 MHz, 166 MHz and 200MHz
Supports ECC error detection and correction
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 3 and 4 (clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect (SPD) with EEPROM
VCC = VCCQ = +2.6V ±0.1V (200MHz)
VCC = VCCQ = +2.5V ±0.2V (133 and 166MHz)
Gold edge contacts
Dual Rank
JEDEC standard 200 pin, small-outline, SO-DIMM
package
PCB height option:
D4: 31.75 mm (1.25”) TYP
NOTE: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
DESCRIPTION
The W3EG264M64EFSU is a 2x64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
components. The module consists of sixteen 64Mx8 DDR
SDRAMs in FBGA packages mounted on a 200 pin FR4
substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
OPERATING FREQUENCIES
DDR400@CL=3
DDR333@CL=2.5
DDR266@CL=2
DDR266@CL=2.5
Clock Speed
200MHz
166MHz
133MHz
CL-tRCD-tRP
3-3-3
2.5-3-3
2-2-2
2.5-3-3
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