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參數(shù)資料
| 型號： | W364M72V-133SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 515K |
| 代理商： | W364M72V-133SBC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2008
Rev. 3
W364M72V-XSBX
Discrete Approach
SAVINGS – Area: 66% – I/O Count: 55%
Area = 800mm2
Area: 9 x 265mm2 = 2,385mm2
I/O Count = 219 Balls
I/O Count: 9 x 54 pins = 486 pins
11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
ACTUAL SIZE
25
32
White Electronic Designs
W364M72V-XSBX
BENEFITS
66% SPACE SAVINGS
Reduced part count from 9 to 1
Reduced I/O count
55% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
GENERAL DESCRIPTION
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS,
dynamic random-access, memory using 9 chips containing
512M bits. Each chip is internally congured as a quad-
bank DRAM with a synchronous interface. Each of the
chip’s 134,217,728-bit banks is organized as 8,192 rows
by 2,048 columns by 8 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
64Mx72 Synchronous DRAM
FEATURES
High Frequency = 100, 125, 133MHz
Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
3.3V ±0.3V power supply for core and I/Os
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
8,192 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
Organized as 64M x 72
Weight: W364M72V-XSBX - TBD grams typical
This product is subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W39L020P-90Z | 256K X 8 FLASH 3.3V PROM, 90 ns, PQCC32 |
| W39L512Q-90B | 64K X 8 FLASH 3.3V PROM, 90 ns, PDSO32 |
| W39V040FCQ | 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32 |
| W3E16M72SR250BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E32M64S-200BM | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W364M72V-133SBI | 制造商:Microsemi Corporation 功能描述:64M X 72 SDRAM, 3.3V, 133MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W364M72V-133SBM | 制造商:Microsemi Corporation 功能描述:64M X 72 SDRAM, 3.3V, 133MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W364M72V-ESSB | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 Synchronous DRAM |
| W364M72V-ESSBC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 Synchronous DRAM |
| W364M72V-ESSBI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 Synchronous DRAM |
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