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參數(shù)資料
| 型號： | W3E16M72SR250BM |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 744K |
| 代理商： | W3E16M72SR250BM |
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3E16M72SR-XBX
February 2005
Rev. 2
16Mx72 Registered DDR SDRAM
Registered for enhanced performance of bus
speeds of 200, 225, and 250 MHz
Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
2.5V ±0.2V core power supply
2.5V I/O (SSTL_2 compatible)
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
Internal pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Programmable Burst length: 2,4 or 8
Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (one per byte)
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Two data mask (DM) pins for masking write data
Programmable IOL/IOH option
Auto precharge option
FEATURES
25
32
66
TSOP
66
TSOP
66
TSOP
66
TSOP
66
TSOP
11.9
22.3
Monolithic Solution
Actual Size
S
A
V
I
N
G
S
Area
I/O
Count
5 x 265mm2 + 2 x 105mm2 = 1536mm2
5 x 66 pins + 2 x 48 = 426 pins
800mm2
47%
219 Balls
49%
W3E16M72SR-XBX
White Electronic Designs
48
TSOP
12.6
48
TSOP
12.6
8.3
11.9
22.3
Auto Refresh and Self Refresh Modes
Commercial, Industrial and Military Temperature
Ranges
Organized as 16M x 72
Weight: W3E16M72SR-XBX - 2.5 grams typical
BENEFITS
47% SPACE SAVINGS
Glueless Connection to PCI Bridge/Memory
Controller
Reduced part count
Reduced I/O count
49% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
Upgradeable to 32M x 72 density (contact factory
for information)
* This product is subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3E32M64S-200BM | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| W3E32M64S-250BM | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| W3E32M64S-266BI | 32M X 64 DDR DRAM, 0.75 ns, PBGA219 |
| W3E32M64S-250SBI | 32M X 64 DDR DRAM, 0.8 ns, PBGA208 |
| W3E32M64S-400SBC | 32M X 64 DDR DRAM, 0.7 ns, PBGA208 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E16M72SR-266BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 Registered DDR SDRAM |
| W3E16M72SR-266BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 Registered DDR SDRAM |
| W3E16M72SR-266BM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 Registered DDR SDRAM |
| W3E16M72SR-XBX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Registered DDR SDRAM MCP |
| W3E16M72S-XBX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DDR SDRAM MCP |
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