- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245689 > W27E02P-70 (WINBOND ELECTRONICS CORP) 256K X 8 EEPROM 5V, 70 ns, PQCC32 PDF資料下載
參數(shù)資料
| 型號： | W27E02P-70 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 8 EEPROM 5V, 70 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 268K |
| 代理商： | W27E02P-70 |
Preliminary W27E02
Publication Release Date: April 14, 2005
- 3 -
Revision A2
Standby Mode
The standby mode significantly reduces VDD current. This mode is entered when #CE high. In standby
mode, all outputs are in a high impedance state, independent of #OE and #PGM.
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27E02 provides two control inputs for
multiple memory connections. Two-line control provides for lowest possible memory power dissipation
and ensures that data bus contention will not occur.
System Considerations
EPROM power switching characteristics require careful device decoupling. System designers are
concerned with three supply current issues: standby current levels (ISB), active current levels (ICC), and
transient current peaks produced by the falling and rising edges of #CE. Transient current magnitudes
depend on the device output's capacitive and inductive loading. Two-line control and proper decoupling
capacitor selection will suppress transient voltage peaks. Each device should have a 0.1
F ceramic
capacitor connected between its VDD and Vss. This high frequency, low inherent-inductance capacitor
should be placed as close as possible to the device. Additionally, for every eight devices, a 4.7
F
electrolytic capacitor should be placed at the array's power supply connection between VDD and Vss.
The bulk capacitor will overcome voltage slumps caused by PC board trace inductances.
7. TABLE OF OPERATING MODES
VDD = 5.0V
±10 %, Vpp = VpE = VHH = 12V, VCP = VPE = VCE = 5.0V, X = VIH or VIL
PINS
MODE
#CE
#OE
#PGM
A0
A9
OTER
ADDR
VDD
VPP
OUTPUTS
Read
VIL
X
VDD
DOUT
Output Disable
VIL
VIH
X
VDD
High Z
Standby (TTL)
VIH
X
VDD
High Z
Standby (CMOS)
VDD
±0.3V
X
VDD
High Z
Program
VIL
VIH
VIL
X
VCP
VPP
DIN
Program Verify
VIL
VIH
X
VCP
VPP
DOUT
Program Inhibit
VIH
X
VCP
VPP
High Z
Erase1
VIL
VIH
VIL
VPE
VCE
VPE
FF (Hex)
First command:
Addr. = 5555 (hex)
VCE
VCP
AA (Hex)
Erase2
VIL
VIH
VIL
Second command:
Addr. = 2AAA (hex)
VCE
VCP
10 (Hex)
Erase Verify
VIL
VIH
X
VPE
VPP
DOUT
Erase Inhibit
VIH
X
VCE
VPE
High Z
Product Identifier -
Manufacturer
VIL
X
VIL
VHH
X
VDD
DA (Hex)
Product Identifier -
Device
VIL
X
VIH
VHH
X
VDD
85 (Hex)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3DG6465V75D2 | 64M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| W25Q16DWSFIG | 16M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| WMF128K8-90FFC5 | 128K X 8 FLASH 5V PROM, 90 ns, CDSO32 |
| WMF128K8-70CLC5 | 128K X 8 FLASH 5V PROM, 70 ns, CQCC32 |
| WS128K64V-20G4WM | 1M X 8 MULTI DEVICE SRAM MODULE, 20 ns, CQMA116 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W27E040 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 ELECTRICALLY ERASABLE EPROM |
| W27E040-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 ELECTRICALLY ERASABLE EPROM |
| W27E040-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 ELECTRICALLY ERASABLE EPROM |
| W27E040P-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 ELECTRICALLY ERASABLE EPROM |
| W27E040P-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 ELECTRICALLY ERASABLE EPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。