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參數(shù)資料
| 型號(hào)： | W26B04B-70LE |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | TFBGA-48 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | W26B04B-70LE |
W26B04
Publication Release Date: April 2, 2002
- 5 -
Revision A4
AC Characteristics, continued
(VSS = 0V; TA (
°C) = -20 to 85 for LE, -40 to 85 for LI)
Read Cycle
W26B04
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Read Cycle Time
TRC
70
-
nS
Address Access Time
TAA
-
70
nS
Chip Select Access Time
TACS
-
70
nS
Output Enable to Output Valid
TAOE
-
35
nS
#UB, #LB Access Tim
TBA
70
nS
Chip Selection to Output in Low Z
TCLZ*
10
-
nS
Output Enable to Output in Low Z
TOLZ*
5
-
nS
#UB, #LB Enable to Output in Low Z
TBLZ*
5
-
nS
Chip Deselection to Output in High Z
TCHZ*
-
30
nS
Output Disable to Output in High Z
TOHZ*
-
30
nS
#UB, #LB Disable to Output in High Z
TBHZ*
-
30
nS
Output Hold from Address Change
TOH
10
-
nS
These parameters are sampled but not 100% tested
Write Cycle
W26B04
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write Cycle Time
TWC
70
-
nS
Chip Selection to End of Write
TCW
60
-
nS
Address Valid to End of Write
TAW
60
-
nS
#UB, #LB Select to End of Write
TBW
60
-
nS
Address Setup Time
TAS
0
-
nS
Write Pulse Width
TWP
55
-
nS
Write Recovery Time
#CS, #WE
TWR
0
-
nS
Data Valid to End of Write
TDW
40
-
nS
Data Hold from End of Write
TDH
0
-
nS
Write to Output in High Z
TWHZ*
-
30
nS
Output Disable to Output in High Z
TOHZ*
-
30
nS
Output Active from End of Write
TOW
5
-
nS
These parameters are sampled but not 100% tested
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