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參數(shù)資料
| 型號： | W26B04B-70LE |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | TFBGA-48 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 0K |
| 代理商： | W26B04B-70LE |
W26B04
Publication Release Date: April 2, 2002
- 3 -
Revision A4
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
LE
-20 to 85
°C
LI
-40 to 85
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VSS = 0V; TA (
°C) = -20 to 85 for LE, -40 to 85 for LI)
PARAMETER
SYM.
TEST
W26B04
UNIT
CONDITIONS
MIN.
MAX.
Operating Power Voltage
VDD
-
2.7
3.6
V
Input Low Voltage
VIL
-
-0.2
+0.4
V
Input High Voltage
VIH
-
+2.2
VDD +0.3
V
Input Leakage Current
ILI
VIN = VSS to VDD
-1
+1
A
Output Leakage Current
ILO
VI/O = VSS to VDD; #CS = VIH
(min.) or #OE = VIH (min.)
or #WE = VIL (max.)
-1
+1
A
Output Low Voltage
VOL
IOL = +2.1 mA
-
0.4
V
Output High Voltage
VOH
IOH = -1.0 mA
2.4
-
V
Operating Power Supply
Current
IDD
#CS= VIL (max.), I/O = 0 mA;
Cycle = min. Duty = 100%
-
40
mA
ISB
#CS = VIH (min.)
-
0.3
mA
Standby Power Supply
Current
ISB1
#CS
≥ VDD -0.2V
-
10
A
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