- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359444 > VTP8551 (PerkinElmer Inc.) VTP Process Photodiodes PDF資料下載
參數(shù)資料
| 型號： | VTP8551 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | VTP Process Photodiodes |
| 中文描述： | VTP過程光電二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | VTP8551 |
63
VTP Process Photodiodes
VTP8551
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent
molded plastic package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning these devices side by side. These
diodes exhibit low dark current under reverse
bias and fast speed of response.
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MNI-DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUMRATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP8551
UNITS
Mn.
Typ.
Max.
I
SC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
50
70
.20
350
-2.0
μA
%/°C
mV
mV/°C
nA
G
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
W
cm Hz
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
30
.15
50
.05
.55
400
1150
925
140
±50
33
1.8 x 10
-13
(Typ.)
1.5 x 10
12
(Typ.)
/ W
Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
相關PDF資料 |
PDF描述 |
|---|---|
| VTP8651 | VTP Process Photodiodes |
| VTP9412 | VTP Process Photodiodes |
| VTR16D1 | Reflective Optoswitch |
| VTR16E1 | |
| VTS2028 | PHOTOVOLTAIC SOLAR CELL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VTP8551H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Angle of Half Sensitivity :50; Dark Current:30nA; Diode Case Style:MiniDIP; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:85C; Sensitivity:0.55A/W ;RoHS Compliant: Yes |
| VTP8651 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:VTP Process Photodiodes |
| VTP8651H | 制造商:EG & G VACTEC 功能描述:Commercial Sensors Photodiodes 制造商:PerkinElmer Inc 功能描述:Commercial Sensors Photodiodes |
| VTP8740STRH | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Angle of Half Sensitivity :42; Dark Current:20nA; Diode Case Style:SMD; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:85C; Sensitivity:0.6A/W ;RoHS Compliant: Yes |
| VTP8840BTRH | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Angle of Half Sensitivity :42; Dark Current:20nA; Diode Case Style:SMD; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:85C; Sensitivity:0.6A/W ;RoHS Compliant: Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復。