參數(shù)資料
型號(hào): VTP8651
廠商: PerkinElmer Inc.
英文描述: VTP Process Photodiodes
中文描述: VTP過程光電二極管
文件頁數(shù): 1/1頁
文件大?。?/td> 26K
代理商: VTP8651
64
VTP Process Photodiodes
VTP8651
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic,
infrared transmtting package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning devices side by side. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MNI-DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUMRATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP8651
UNITS
Mn.
Typ.
Max.
I
SC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
35
55
.24
300
-2.0
μA
%/°C
mV
mV/°C
nA
G
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
W
cm Hz
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
30
.15
50
.045
.50
725
1150
925
140
±50
33
2.0 x 10
-13
(Typ.)
1.4 x 10
12
(Typ.)
/ W
Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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