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參數(shù)資料
| 型號： | VP0120 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強模式垂直的DMOS場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | VP0120 |
7-223
9
7
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Applications
■
■
Motor controls
■
■
Converters
■
■
Amplifiers
■
■
Switches
■
■
Power supply circuits
■
■
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
■
■
Free from secondary breakdown
■
■
Low power drive requirement
■
■
Ease of paralleling
■
■
Low C
ISS
and fast switching speeds
Excellent thermal stability
■
■
■
■
Integral Source-Drain diode
■
■
High input impedance and high gain
■
■
Complementary N- and P-channel devices
Order Number / Package
BV
DSS
/
BV
DGS
-200V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
Die
25
-100mA
VP0120N3
MIL visual screening available
Ordering Information
TO-92
S G D
– OBSOLETE –
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PDF描述 |
|---|---|
| VP0204N2 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VP0204N5 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VP0204N7 | P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |
| VP0204N6 | P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |
| VP0216N2 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VP0120N3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 100MA I(D) | TO-92 |
| VP0120ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP01A12B10 | 制造商:Hamlin Electronics 功能描述: |
| VP01A24A10 | 制造商:Hamlin Electronics 功能描述: |
| VP01C12A10 | 制造商:Hamlin Electronics 功能描述: |
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