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參數(shù)資料
| 型號： | VNW50N04A |
| 廠商： | 意法半導體 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 126K |
| 代理商： | VNW50N04A |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 25 A
R
gen
= 10
100
400
800
500
200
700
1500
900
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 25 A
R
gen
= 1000
1.8
3
18
10
3
5
25
15
μ
s
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 15 V
I
D
= 25 A
R
gen
= 10
I
D
= 25 A
55
Q
i
Total Input Charge
V
in
= 10 V
190
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
t
rr
(
)
Forward On Voltage
I
SD
= 25 A
V
in
= 0
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 25 A
V
DD
= 30 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 25
C
800
5
15
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
35
35
50
50
65
65
A
A
μ
s
μ
s
o
C
t
dlim
(
)
Step Response
Current Limit
50
130
80
200
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 10 mH
R
gen
= 1 K
4
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNW50N04A
3/11
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