- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359406 > VNI4140K (意法半導(dǎo)體) Zener Diode; Application: General; Pd (mW): 500; Vz (V): 14.5 to 15.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 PDF資料下載
參數(shù)資料
| 型號(hào)： | VNI4140K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 14.5 to 15.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| 中文描述： | 四高端智能功率固態(tài)繼電器 |
| 文件頁(yè)數(shù)： | 1/23頁(yè) |
| 文件大?。?/td> | 508K |
| 代理商： | VNI4140K |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
November 2007
Rev 2
1/23
23
VNI4140K
Quad high side smart power solid state relay
Features
■
Output current : 0.7 A per channel
■
Shorted load protections
■
Junction over-temperature protection
■
Case overtemperature protection for thermal
independence of the channels
■
Thermal case shut-down restart not
simultaneous for the various channels
■
Protection against loss of ground
■
Current limitation
■
Undervoltage shut-down
■
Open drain diagnostic outputs
■
3.3 V CMOS/TTL compatible inputs
■
Fast demagnetization of inductive loads
■
Conforms to IEC 61131-2
Description
The VNI4140K is a monolithic device made using
STMicroelectronics VIPower technology, intended
for driving four independent resistive or inductive
loads with one side connected to ground. Active
current limitation avoids dropping the system
power supply in case of shorted load. Built-in
thermal shut-down protects the chip from
overtemperature and short circuit. In overload
condition, channel turns OFF and back ON
automatically so as to maintain junction
temperature between T
TSD
and T
R
. If
this
condition makes case temperature reach T
CSD
,
overloaded channel is turned OFF and will restart
only when case temperature has decreased down
to T
CR
. In case of more than one channel in
overload, re-start of the overloaded channels will
not be simultaneous, in order to avoid high peak
current from the supply. Non overloaded channels
continue to operate normally. The open drain
diagnostics outputs indicates over-temperature
conditions.
Type
V
demag(1)
1.
Per channel
R
DSon(1)
I
out(1)
V
CC
VNI4140K
V
CC
-41 V
0.08
0.7 A
41 V
PowerSSO-24
www.st.com
Figure 1.
Block diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNK10N06FM | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VNK14N04FM | MULTI DVI RECEIVER W/SA D/CHAIN MULTIMODE -FIBER |
| VNK7N04FM | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VNN3NV04 | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| VNP10N06FI | “OMNIFET ”：Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率ＭＯＳＦＥＴ) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNI4140K_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Quad high side smart power solid state relay S |
| VNI4140K_12 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Quad high-side smart power solid-state relay |
| VNI4140K-32 | 功能描述:功率驅(qū)動(dòng)器IC Quad High Side Smart 41V 0.08Ohm 1A SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNI4140KTR | 功能描述:固態(tài)繼電器-PCB安裝 Quad Hi side smart Power SS Relay RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| VNI4140KTR-32 | 功能描述:固態(tài)繼電器-PCB安裝 Quad High Side SSR 0.08 RDSon 1A 41V RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。