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參數(shù)資料
| 型號(hào)： | VNH3SP30 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | FULLY INTEGRATED H-BRIDGE MOTOR DRIVER |
| 中文描述： | 完全集成的H橋電機(jī)驅(qū)動(dòng) |
| 文件頁數(shù)： | 8/26頁 |
| 文件大小： | 222K |
| 代理商： | VNH3SP30 |
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VNH3SP30
REVERSE BATTERY PROTECTION
Three possible solutions can be thought of:
a) a Schottky diode
D
connected to V
CC
pin
b) a N-channel MOSFET connected to the GND pin (see Typical Application Circuit on page 7)
c) a P-channel MOSFET connected to the V
CC
pin
The device sustains no more than -30A in reverse battery conditions because of the two Body diodes of
the Power MOSFETs. Additionally, in reverse battery condition the I/Os of VNH2SP30 will be pulled down
to the V
CC
line (approximately -1.5V). Series resistor must be inserted to limit the current sunk from the
microcontroller I/Os. If I
Rmax
is the maximum target reverse current through
μ
C I/Os, series resistor is:
V
Rmax
OPEN LOAD DETECTION IN OFF-MODE
It is possible for the microcontroller to detect an open load condition by adding a simply resistor (for
example 10k
) between one of the outputs of the bridge (for example OUT
B
) and one microcontroller
input. A possible sequence of inputs and enable signals is the following: IN
A
=1, IN
B
=X, EN
A
= 1, EN
B
=0.
-
normal condition: OUT
A
=H and OUT
B
=H
-
open load condition: OUT
A
=H and OUT
B
=L: in this case the OUT
B
pin is internally pulled down to
GND. This condition is detected on OUT
B
pin by the microcontroller as an open load fault.
SHORT CIRCUIT PROTECTION
In case of a fault condition the DIAG
X
/EN
X
pin is considered as an output pin by the device.
The fault conditions are:
- overtemperature on one or both high sides;
- short to battery condition on the output (saturation detection on the Low-Side Power MOSFET).
Possible origins of fault conditions may be:
OUT
A
is shorted to ground ---> overtemperature detection on high side A.
OUT
A
is shorted to V
CC
---> Low-Side Power MOSFET saturation detection.
(1)
When a fault condition is detected, the user can know which power element is in fault by monitoring the
IN
A
, IN
B
, DIAG
A
/EN
A
and DIAG
B
/EN
B
pins.
In any case, when a fault is detected, the faulty half bridge is latched off. To turn-on the respective output
(OUT
X
) again, the input signal must rise from low to high level.
(1) An internal operational amplifier compares the Drain-Source MOSFET voltage with the internal reference (2.7V Typ.).
The relevant Lowside PowerMOS is switched off when its Drain-Source voltage exceeds the reference voltage.
TRUTH TABLE IN FAULT CONDITIONS (detected on OUT
A
)
IN
A
1
IN
B
1
DIAG
A
/EN
A
0
DIAG
B
/EN
B
1
OUT
A
OPEN
OUT
B
H
1
0
0
1
OPEN
L
0
1
0
1
OPEN
H
0
0
0
1
OPEN
L
X
X
0
0
OPEN
OPEN
X
1
0
1
OPEN
H
X
0
0
1
OPEN
OPEN
R
V
CC
–
------I
=
Fault Information
Protection Action
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