參數(shù)資料
型號(hào): VN3515L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓350V,夾斷電流0.15A的N溝道增強(qiáng)型MOSFET晶體管)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓350V,夾斷電流0.15A的N溝道增強(qiáng)型MOSFET的晶體管)
文件頁數(shù): 3/4頁
文件大?。?/td> 60K
代理商: VN3515L
VN3515L/VN4012L
Siliconix
P-38281—Rev. D, 15-Aug-94
3
Typical Characteristics (25 C Unless Otherwise Noted)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
I
D
I
D
I
D
r
D
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
T
J
– Junction Temperature ( C)
r
D
(
500
0
1
2
3
4
5
400
300
200
100
0
4.0 V
3.0 V
2.5 V
2.0 V
V
GS
= 10 V
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
1.8 V
1.6 V
1.4 V
200
160
120
0
0
1
5
80
40
2
3
4
–55 C
T
C
= 125 C
25 C
12
0
4
8
12
16
20
11
10
9
5
8
7
6
20 mA
On-Resistance vs. Junction Temperature
V
DS
= 15 V
I
D
= 100 mA
2.25
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
13
12
11
8
0
0.2
10
9
0.6
0.4
V
GS
= 4.5 V
r
D
V
GS
= 4.5 V
I
D
= 0.02 A
I
D
= 0.1 A
V
GS
= 2.0 V
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