- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359402 > VN3515L (Vishay Intertechnology,Inc.) N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓350V，夾斷電流0.15A的N溝道增強型MOSFET晶體管) PDF資料下載
參數(shù)資料
| 型號： | VN3515L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓350V，夾斷電流0.15A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓350V，夾斷電流0.15A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | VN3515L |
VN3515L/VN4012L
2
Siliconix
P-38281—Rev. D, 15-Aug-94
Specifications
a
Limits
VN3515L
VN4012L
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Volt-
age
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
420
350
400
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.3
0.6
1.8
0.6
1.8
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
1
10
10
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
1
A
T
J
= 125 C
100
100
On-State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
800
150
150
mA
V
GS
= 3.5 V, I
D
= 0.05 A
8.7
V
GS
= 4.5 V, I
D
= 0.1 A
8.7
15
12
Drain-Source On-Resistance
c
r
DS(on)
T
J
= 125 C
15.5
35
30
V
GS
= 4.5 V, I
D
= 0.15 A
8.7
T
J
= 125 C
15.5
Forward Transconductance
c
g
fs
V
DS
= 15 V, I
D
= 0.1 A
350
125
125
mS
Diode Forward Voltage
V
SD
I
S
= 0.1 A, V
GS
= 0 V
0.8
V
Dynamic
Input Capacitance
C
iss
85
110
110
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
20
30
30
pF
Reverse Transfer Capacitance
C
rss
5
10
10
Switching
d
t
ON
4.5
Turn-On Time
t
d(on)
2.5
20
20
t
r
25
0 1
0.1
2
20
20
ns
t
OFF
36
Turn-Off Time
t
d(off)
27
65
65
t
f
9
65
65
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDV40
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN3515L | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V,15Ω，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| VN370B | |
| VN370SP | Triple Peripheral Driver |
| VN380 | Smart Solenoid Driver Solid State Relay(智能螺線管驅(qū)動器固態(tài)繼電器) |
| VN4012L | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN3515L-G | 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN3515L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN3515L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN3515L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN3515L-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。