參數(shù)資料
型號: VN3205
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓50V,0.3Ω,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: N溝道增強型場效應(yīng)管垂直的DMOS(擊穿電壓50V的0.3Ω,?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 4/4頁
文件大?。?/td> 31K
代理商: VN3205
7-216
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
V
G
T
j
(
°
C)
V
G
R
D
(
V
DS(ON)
GS(th)
and R
Variation with Temperature
On-Resistance vs. Drain Current
R
D
(
Variation with Temperature
DSS
D
B
(
C)
°
(
T
j
Transfer Characteristics
V
GS
(volts)
I
D
Capacitance vs. Drain-to-Source Voltage
300
C
V
DS
(volts)
I
D
(amperes)
BV
0
10
20
30
40
100
400
200
0
0
2
4
6
8
10
10
8
6
4
2
0
-50
0
50
100
150
1.1
1.0
1.0
0.8
0.6
0.4
0.2
0
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0
1
2
3
4
5
-50
0
50
100
150
325 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10V
T
= -55
°
C
A
V
DS
= 25V
125
°
C
0
4
8
12
20
16
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
215 pF
1.6
1.4
1.2
1.0
0.8
0.6
V
GS(th)
@ 1mA
25
°
C
0
R
DS(ON)
@ 10V, 3A
VN3205
Typical Performance Curves
相關(guān)PDF資料
PDF描述
VN3205 INDUCTOR 6.8UH 180MA 1210 10%
VN3205N3 N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N6 N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N8 N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205ND N-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN3205_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3 功能描述:MOSFET 50V 0.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN3205N3-G 功能描述:MOSFET 50V 0.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN3205N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN3205N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET