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參數資料
| 型號： | VN3205 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓50V,0.3Ω，N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓50V的0.3Ω，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | VN3205 |
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VN3205
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
D
1
D
4
G
1
G
4
S
1
S
4
NC
NC
S
2
S
3
G
2
G
3
D
2
D
3
Package Options
Note: See Package Outline section for dimensions.
1
7
6
5
4
3
2
top view
14-pin DIP
14
13
12
11
10
9
8
TO-243AA
(SOT-89)
S G D
G
D
S
D
BV
DSS
/
BV
DGS
50V
R
DS(ON)
(max)
V
GS(th)
(max)
Order Number / Package
TO-92
14-Pin P-DIP
TO-243AA*
Die
0.3
2.4V
VN3205N3
VN3205N6
VN3205N8
VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available
Ordering Information
N-Channel Enhancement-Mode
Vertical DMOS FETs
Product marking for TO-243AA:
VN2L*
Where *= 2-week alpha date code
相關PDF資料 |
PDF描述 |
|---|---|
| VN3205 | INDUCTOR 6.8UH 180MA 1210 10% |
| VN3205N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN3205N6 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN3205N8 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN3205ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| VN3205_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN3205N3 | 功能描述:MOSFET 50V 0.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN3205N3-G | 功能描述:MOSFET 50V 0.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN3205N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN3205N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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