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參數(shù)資料
| 型號(hào)： | VN2450 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓500V,13Ω，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS（擊穿電壓的500V，13Ω，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | VN2450 |
2
VN2450
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.6W
1W
θ
jc
°
C/W
15
125
θ
ja
°
C/W
78
170
I
DR
*
I
DRM
TO-243AA
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
0.25A
0.2A
0.75A
0.65A
0.25A
0.2A
0.75A
0.65A
Thermal Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Min
Typ
Max
Unit
Conditions
500
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
1.5
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
-5.5
100
10
mV/
°
C
nA
μ
A
mA
1
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
20
13
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 400mA
V
GS
= 10V, I
D
= 400mA
V
DS
= 25V, I
D
= 200mA
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
1.7
%/
°
C
50
m
150
50
25
10
10
25
20
1.5
pF
V
V
GS
= 0V, I
SD
= 400mA
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 2.0mA
ns
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25
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