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參數(shù)資料
| 型號： | VN2224N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 540 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | VN2224N3 |
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
V
GS
= 0V, I
D
= 5mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
1.0
3.0
V
V
GS
= V
DS
, I
D
= 5mA
V
GS
= V
DS
, I
D
= 5mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 2A
V
GS
= 10V, I
D
= 2A
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4
-5
mV/
°
C
1
100
nA
Zero Gate Voltage Drain Current
50
μ
A
5
mA
I
D(ON)
ON-State Drain Current
2
5
10
R
DS(ON)
1.0
1.5
0.9
1.25
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.0
1.4
%/
°
C
1.0
2.2
Input Capacitance
300
350
Common Source Output Capacitance
85
150
pF
Reverse Transfer Capacitance
20
35
Turn-ON Delay Time
6
15
Rise Time
16
25
Turn-OFF Delay Time
65
90
Fall Time
30
60
Diode Forward Voltage Drop
0.8
1.0
V
V
GS
= 0V, I
SD
= 100mA
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
500
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
540mA
5.0A
540mA
5.0A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
A
VN2222/VN2224
Static Drain-to-Source
ON-State Resistance
V
DD
= 25V
I
D
= 2A
R
GEN
= 10
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
ns
VN2224
240
VN2222
220
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2224N3-G | 功能描述:MOSFET 240V 1.25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2224N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2224N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2224N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2224N3-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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