參數(shù)資料
型號: VN1206L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓120V,夾斷電流0.23A的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET晶體管(最小漏源擊穿電壓120伏特,夾斷電流0.23A的N溝道增強型MOSFET的晶體管)
文件頁數(shù): 4/4頁
文件大?。?/td> 74K
代理商: VN1206L
VN1206L
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
11-4
Document Number: 70227
S-00591—Rev. D, 03-Apr-99
10
100
1000
100
10
1
V
DD
= 25 V
R
G
= 25
V
GS
= 0 to 10 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (pC)
I
C
V
t
t
d(on)
t
d(off)
t
r
t
f
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
10
1
0.01
0
0.5
0.1
1
1.5
2
–55 C
25 C
T
J
= 150 C
120
100
80
0
0
10
50
60
40
20
30
40
20
Crss
Ciss
Coss
12
10
8
0
0
120
600
6
4
240
360
480
2
96 V
ID= 0.5 A
VDS= 60 V
V
DS
= 15 V
V
= 0 V
f = 1 MHz
相關PDF資料
PDF描述
VN1206 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓120V,N溝道增強型垂直DMOS結構場效應管)
VN1210M TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 250MA I(D) | TO-237
VN1206M TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 330MA I(D) | TO-237
VN121SP
VN1216N1 N-Channel Enhancement-Mode Vertical DMOS Power FETs
相關代理商/技術參數(shù)
參數(shù)描述
VN1206L-G 功能描述:MOSFET 120V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN1206L-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN1206L-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN1206L-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN1206L-G P013 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET