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參數(shù)資料
| 型號： | VN1206L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓120V,夾斷電流0.23A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓120伏特，夾斷電流0.23A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | VN1206L |
VN1206L
Vishay Siliconix
Document Number: 70227
S-00591—Rev. D, 03-Apr-99
www.vishay.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET Transistor
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
120
6 @ V
GS
= 10 V
0.8 to 2
0.23
Low On-Resistance: 3.8
Low Threshold: 1.4 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 10 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
VN1206L
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
120
V
Gate-Source Voltage
V
GS
30
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.23
A
T
A
= 100 C
0.15
Pulsed Drain Current
a
I
DM
2
Power Dissipation
T
A
= 25 C
P
D
0.8
W
T
A
= 100 C
0.32
Maximum Junction-to-Ambient
R
thJA
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN1206L-G | 功能描述:MOSFET 120V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN1206L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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