參數(shù)資料
型號(hào)： VN0808LS
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 80- and 90-V (D-S) MOSFETs
中文描述： N溝道80 -和90 - V（下局副局長(zhǎng)）的MOSFET
文件頁數(shù)： 2/4頁
文件大?。?/td> 52K
代理商： VN0808LS
VN0808L/LS, VQ1006P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70214
S-04279
—
Rev.D, 16-Jul-01
Limits
VN0808L/LS
VQ1006P
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
125
80
90
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.6
0.8
2
0.8
2.5
V
V
DS
= 0 V, V
GS
=
15 V
100
100
Gate-Body Leakage
I
GSS
T
J
= 125 C
500
nA
V
DS
= 80 V, V
GS
= 0 V
10
T
J
= 125 C
500
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 72 V, V
GS
= 0 V
1
A
T
J
= 125 C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1.8
1.5
1.5
A
V
GS
= 5 V, I
D
= 0.3 A
3.8
5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
3.6
4
4.5
T
J
= 125 C
6.7
8
8.6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
Common Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
0.23
mS
Dynamic
Input Capacitance
C
iss
35
50
60
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
15
40
50
pF
Reverse Transfer Capacitance
C
rss
2
10
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
I
D
1 A, V
= 10 V
R
G
= 25
6
10
10
Turn-Off Time
t
OFF
8
10
10
ns
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ09
2%.
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參數(shù)描述
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